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| Type | Description |
|---|---|
| Series: | aMOS5™ |
| Package: | Tube |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 600 V |
| Current - Continuous Drain (Id) @ 25°C: | 20A (Tj) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 190mOhm @ 7.6A, 10V |
| Vgs(th) (Max) @ Id: | 4.6V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 34 nC @ 10 V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 1935 pF @ 100 V |
| FET Feature: | - |
| Power Dissipation (Max): | 32W (Tc) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | TO-220F |
| Package / Case: | TO-220-3 Full Pack |
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|---|---|---|---|
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2SK1290-AZRenesas Electronics America |
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APT7M120BRoving Networks / Microchip Technology |
MOSFET N-CH 1200V 8A TO247 |
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IXFX120N30P3Wickmann / Littelfuse |
MOSFET N-CH 300V 120A PLUS247-3 |
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RMA7P20ED1Rectron USA |
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FDT86256Sanyo Semiconductor/ON Semiconductor |
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FQA11N90Fairchild (ON Semiconductor) |
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STW10N95K5STMicroelectronics |
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