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| Type | Description |
|---|---|
| Series: | DTMOSIV |
| Package: | Tube |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 600 V |
| Current - Continuous Drain (Id) @ 25°C: | 5.4A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 900mOhm @ 2.7A, 10V |
| Vgs(th) (Max) @ Id: | 3.7V @ 270µA |
| Gate Charge (Qg) (Max) @ Vgs: | 10.5 nC @ 10 V |
| Vgs (Max): | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds: | 380 pF @ 300 V |
| FET Feature: | Super Junction |
| Power Dissipation (Max): | 60W (Tc) |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | I-PAK |
| Package / Case: | TO-251-3 Stub Leads, IPak |
| Image | Part Number | Description | Stock / Unit Price |
|---|---|---|---|
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SIDR140DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 25V 79A/100A PPAK |
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IPD60R520CPATMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 6.8A TO252-3 |
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SIS176LDN-T1-GE3Vishay / Siliconix |
N-CHANNEL 70 V (D-S) MOSFET POWE |
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IPP60R099C6XKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 37.9A TO220-3 |
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NDD04N60Z-1GSanyo Semiconductor/ON Semiconductor |
POWER MOSFET 600V |
In Stock: 1,159 $0.36000 |
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FDD8870Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 21A/160A TO252AA |
In Stock: 5,135 $1.35000 |
