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| Type | Description |
|---|---|
| Series: | HEXFET® |
| Package: | Tube |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 100 V |
| Current - Continuous Drain (Id) @ 25°C: | 17A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
| Rds On (Max) @ Id, Vgs: | 100mOhm @ 9A, 10V |
| Vgs(th) (Max) @ Id: | 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 34 nC @ 5 V |
| Vgs (Max): | ±16V |
| Input Capacitance (Ciss) (Max) @ Vds: | 800 pF @ 25 V |
| FET Feature: | - |
| Power Dissipation (Max): | 79W (Tc) |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | TO-220AB |
| Package / Case: | TO-220-3 |
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|---|---|---|---|
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IRFI9520GPBFVishay / Siliconix |
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BUK9M8R5-40HXNexperia |
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IPD04N03LB GIR (Infineon Technologies) |
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MMFTN3402Diotec Semiconductor |
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UPA2794GR-E2-AZRenesas Electronics America |
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SI4435DDY-T1-GE3Vishay / Siliconix |
MOSFET P-CH 30V 11.4A 8SO |
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