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FQPF8N80CYDTU

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Manufacturer Part
FQPF8N80CYDTU
Manufacturer
Fairchild (ON Semiconductor)
Description
POWER FIELD-EFFECT TRANSISTOR, 8
Category
Discrete Semiconductor Products
Family
Transistors - FETs, MOSFETs - Single
InStock
14042
Datasheets Online
FQPF8N80CYDTU PDF
  • Series:*
  • Package:Bulk
  • Part Status:Active
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):800 V
  • Current - Continuous Drain (Id) @ 25°C:8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:1.55Ohm @ 4A, 10V
  • Vgs(th) (Max) @ Id:5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:45 nC @ 10 V
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:2.05 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):59W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-220F-3 (Y-Forming)
  • Package / Case:TO-220-3 Full Pack, Formed Leads
Shipping Delivery period For in-stock parts, orders are estimated to ship out in 3 days.
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EMS, 10-15 business days.
Registered Air Mail, 15-30 business days
Shipping rates Shipping rates for your order can be found in the shopping cart.
Shipping option We provide DHL, FedEx, EMS, SF Express, and Registered Air Mail international shipping.
Shipping tracking We will notify you by email with tracking number once order is shipped.
You can also find the tracking number in order history.
Returning / warranty Returning Returns are normally accepted when completed within 30 days from date of shipment,please contact customer service for a return authorization.
Parts should be unused and in original packaging.
Customer has to take charge for the shipping.
Warranty All InFortune purchases come with a 30-day money-back return policy, plus a 90-day InFortune warranty against any manufacturing defects.
This warranty shall not apply to any item where defects have been caused by improper customer assembly, failure by customer to follow instructions, product modification, negligent or improper operation
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