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| Type | Description |
|---|---|
| Series: | Automotive, AEC-Q101, OptiMOS™ |
| Package: | Bulk |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 100 V |
| Current - Continuous Drain (Id) @ 25°C: | 2A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On): | - |
| Rds On (Max) @ Id, Vgs: | 230mOhm @ 2A, 10V |
| Vgs(th) (Max) @ Id: | 4V @ 218µA |
| Gate Charge (Qg) (Max) @ Vgs: | 9.3 nC @ 10 V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 265 pF @ 25 V |
| FET Feature: | - |
| Power Dissipation (Max): | 2W (Ta) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | PG-TSOP6-6 |
| Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
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|---|---|---|---|
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BUK98150-55A/CUFNexperia |
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AUIRFSL4010-313TRLInternational Components Corp. |
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STI28N60M2STMicroelectronics |
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TK10A55D(STA4,Q,M)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 550V 10A TO220SIS |
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MOSFET N-CH 100V 6A/26A 8PQFN |
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C2M0045170PWolfspeed - a Cree company |
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MOSFET N-CH 600V 4A TO251-3 |
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STP410N4F7AGSTMicroelectronics |
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In Stock: 0 $2.45000 |
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IPD230N06LGIR (Infineon Technologies) |
N-CHANNEL POWER MOSFET |
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