Image is for reference, please contact us to get the real picture
| Type | Description |
|---|---|
| Series: | aMOS™ |
| Package: | Tape & Reel (TR)Cut Tape (CT) |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 600 V |
| Current - Continuous Drain (Id) @ 25°C: | 20A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 199mOhm @ 10A, 10V |
| Vgs(th) (Max) @ Id: | 4.1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 19.8 nC @ 10 V |
| Vgs (Max): | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds: | 1038 pF @ 100 V |
| FET Feature: | - |
| Power Dissipation (Max): | 266W (Tc) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | TO-263 (D²Pak) |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Image | Part Number | Description | Stock / Unit Price |
|---|---|---|---|
 |
IPP60R040C7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 50A TO220-3 |
In Stock: 158 $12.81000 |
 |
3401 |
MOSFET P-CH 30V 4.2A SOT-23 |
In Stock: 5,912 $0.43000 |
 |
2SJ583LSSanyo Semiconductor/ON Semiconductor |
P-CHANNEL POWER MOSFET |
In Stock: 5,595 $0.80000 |
 |
IPP028N08N3GHKSA1IR (Infineon Technologies) |
N-CHANNEL POWER MOSFET |
In Stock: 0 $1.96000 |
 |
SQJ412EP-T1_GE3Vishay / Siliconix |
MOSFET N-CH 40V 32A PPAK SO-8 |
In Stock: 11,652 $2.32000 |
 |
IXFN70N60Q2Wickmann / Littelfuse |
MOSFET N-CH 600V 70A SOT-227B |
In Stock: 43 $41.15000 |
 |
SQP50N06-09L_GE3Vishay / Siliconix |
MOSFET N-CH 60V 50A TO220AB |
In Stock: 850 $2.26000 |
 |
IRF7456TRPBFIR (Infineon Technologies) |
MOSFET N-CH 20V 16A 8SO |
In Stock: 3,996 $1.35000 |
 |
BSP297H6327XTSA1IR (Infineon Technologies) |
MOSFET N-CH 200V 660MA SOT223-4 |
In Stock: 17,614 $0.87000 |
 |
RF1S70N06 |
MOSFET N-CH 60V 70A I2PAK |
In Stock: 256 $2.48000 |
