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| Type | Description |
|---|---|
| Series: | GigaMOS™, HiPerFET™, TrenchT2™ |
| Package: | Tube |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 100 V |
| Current - Continuous Drain (Id) @ 25°C: | 320A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 3.5mOhm @ 100A, 10V |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 430 nC @ 10 V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 26000 pF @ 25 V |
| FET Feature: | - |
| Power Dissipation (Max): | 1000W (Tc) |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | TO-268 |
| Package / Case: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
| Image | Part Number | Description | Stock / Unit Price |
|---|---|---|---|
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TPH3R70APL,L1QToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 100V 90A 8SOP |
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IRF640STRRPBFVishay / Siliconix |
MOSFET N-CH 200V 18A TO263 |
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TK56E12N1,S1XToshiba Electronic Devices and Storage Corporation |
MOSFET N CH 120V 56A TO-220 |
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STFI13N65M2STMicroelectronics |
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MOSFET P-CH 65V 120A TO220AB |
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MOSFET P-CH 100V 600MA 3CPH |
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FQD3N60CTMFairchild (ON Semiconductor) |
N-CHANNEL POWER MOSFET |
In Stock: 1,475 $0.31000 |
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IPL60R125P7AUMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 27A 4VSON |
In Stock: 2,721 $3.40000 |
