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| Type | Description |
|---|---|
| Series: | MDmesh™ II Plus |
| Package: | Tube |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 600 V |
| Current - Continuous Drain (Id) @ 25°C: | 26A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 125mOhm @ 13A, 10V |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 45.5 nC @ 10 V |
| Vgs (Max): | ±25V |
| Input Capacitance (Ciss) (Max) @ Vds: | 1781 pF @ 100 V |
| FET Feature: | - |
| Power Dissipation (Max): | 190W (Tc) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | TO-220 |
| Package / Case: | TO-220-3 |
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|---|---|---|---|
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AUIRFS8403TRLInternational Components Corp. |
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IXFH14N85XWickmann / Littelfuse |
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RCX050N25ROHM Semiconductor |
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CSD23201W10Texas Instruments |
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APT56M50LRoving Networks / Microchip Technology |
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AOD4504Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 200V 1.5A/6A TO252 |
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