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| Type | Description |
|---|---|
| Series: | HEXFET® |
| Package: | Bulk |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 80 V |
| Current - Continuous Drain (Id) @ 25°C: | 30A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs: | 28mOhm @ 23A, 10V |
| Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 33 nC @ 4.5 V |
| Vgs (Max): | ±16V |
| Input Capacitance (Ciss) (Max) @ Vds: | 1.89 pF @ 25 V |
| FET Feature: | - |
| Power Dissipation (Max): | 120W (Tc) |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | D-Pak |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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|---|---|---|---|
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TK9A45D(STA4,Q,M)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 450V 9A TO220SIS |
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STP5N105K5STMicroelectronics |
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APT34F100LRoving Networks / Microchip Technology |
MOSFET N-CH 1000V 35A TO264 |
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IPD079N06L3GBTMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 50A TO252-3 |
In Stock: 0 $1.15000 |
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SQ3427EV-T1_GE3Vishay / Siliconix |
MOSFET P-CH 60V 5.3A 6TSOP |
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MOSFET P-CH 60V 11.4A D2PAK |
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SIHG47N60EF-GE3Vishay / Siliconix |
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N-CHANNEL POWER MOSFET |
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MOSFET N-CH 500V 3A TO252AA |
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