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| Type | Description |
|---|---|
| Series: | * |
| Package: | Tube |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss): | 1200 V |
| Current - Continuous Drain (Id) @ 25°C: | 36A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 20V |
| Rds On (Max) @ Id, Vgs: | 90mOhm @ 18A, 20V |
| Vgs(th) (Max) @ Id: | 5.8V @ 20mA |
| Gate Charge (Qg) (Max) @ Vgs: | 67 nC @ 20 V |
| Vgs (Max): | ±25V, -10V |
| Input Capacitance (Ciss) (Max) @ Vds: | 1680 pF @ 800 V |
| FET Feature: | Standard |
| Power Dissipation (Max): | 272W (Tc) |
| Operating Temperature: | -55°C ~ 175°C |
| Mounting Type: | Through Hole |
| Supplier Device Package: | TO-3P(N) |
| Package / Case: | TO-3P-3, SC-65-3 |
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