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| Type | Description |
|---|---|
| Series: | HEXFET® |
| Package: | Tube |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 100 V |
| Current - Continuous Drain (Id) @ 25°C: | 59A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 18mOhm @ 35A, 10V |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 120 nC @ 10 V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 2900 pF @ 25 V |
| FET Feature: | - |
| Power Dissipation (Max): | 160W (Tc) |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | TO-220AB |
| Package / Case: | TO-220-3 |
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|---|---|---|---|
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SI3430DV-T1-E3Vishay / Siliconix |
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ZDX080N50ROHM Semiconductor |
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P-CHANNEL, MOSFET |
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MOSFET N-CH 30V 13A/93A 5DFN |
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IPD65R1K5CEAUMA1IR (Infineon Technologies) |
MOSFET N-CH 700V 5.2A TO252-3 |
In Stock: 0 $0.27755 |
