Type | Description |
---|---|
Series: | POWER MOS 7® |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 1000 V |
Current - Continuous Drain (Id) @ 25°C: | 4A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 3Ohm @ 2A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 34 nC @ 10 V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 694 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 139W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-247 [B] |
Package / Case: | TO-247-3 |
Image | Part Number | Description | Stock / Unit Price |
---|---|---|---|
![]() |
NTD5414NT4GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 24A DPAK |
In Stock: 2,500 $0.31000 |
![]() |
TSM120N06LCS RLGTSC (Taiwan Semiconductor) |
MOSFET N-CHANNEL 60V 23A 8SOP |
In Stock: 4,498 $0.77000 |
![]() |
BUK9M4R3-40HXNexperia |
MOSFET N-CH 40V 95A LFPAK33 |
In Stock: 1,500 $0.73000 |
![]() |
IPD60R1K4C6ATMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 3.2A TO252-3 |
In Stock: 3,416 $0.97000 |
![]() |
BUK9515-60E,127NXP Semiconductors |
MOSFET N-CH 60V 54A TO220AB |
In Stock: 0 $0.37000 |
![]() |
TSM4N90CI C0GTSC (Taiwan Semiconductor) |
MOSFET N-CH 900V 4A ITO220AB |
In Stock: 0 $0.98955 |
![]() |
IPD031N03LGATMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 90A TO252-3 |
In Stock: 0 $0.91000 |
![]() |
RTQ025P02TRROHM Semiconductor |
MOSFET P-CH 20V 2.5A TSMT6 |
In Stock: 0 $0.21700 |
![]() |
IRF7834TRPBFInternational Components Corp. |
MOSFET N-CH 30V 19A 8SO |
In Stock: 2,935 $0.45000 |
![]() |
RUM002N02T2LROHM Semiconductor |
MOSFET N-CH 20V 200MA VMT3 |
In Stock: 0 $0.40000 |