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| Type | Description |
|---|---|
| Series: | BIMOSFET™ |
| Package: | Tube |
| Part Status: | Not For New Designs |
| IGBT Type: | - |
| Voltage - Collector Emitter Breakdown (Max): | 3600 V |
| Current - Collector (Ic) (Max): | 92 A |
| Current - Collector Pulsed (Icm): | 720 A |
| Vce(on) (Max) @ Vge, Ic: | 3.4V @ 15V, 60A |
| Power - Max: | 417 W |
| Switching Energy: | - |
| Input Type: | Standard |
| Gate Charge: | 450 nC |
| Td (on/off) @ 25°C: | 50ns/340ns |
| Test Condition: | 960V, 60A, 4.7Ohm, 15V |
| Reverse Recovery Time (trr): | 1.95 µs |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | ISOPLUSi5-Pak™ |
| Supplier Device Package: | ISOPLUSi5-Pak™ |
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