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| Type | Description |
|---|---|
| Series: | POWER MOS 8™ |
| Package: | Tube |
| Part Status: | Active |
| IGBT Type: | PT |
| Voltage - Collector Emitter Breakdown (Max): | 600 V |
| Current - Collector (Ic) (Max): | 78 A |
| Current - Collector Pulsed (Icm): | 130 A |
| Vce(on) (Max) @ Vge, Ic: | 2.5V @ 15V, 26A |
| Power - Max: | 337 W |
| Switching Energy: | 409µJ (on), 258µJ (off) |
| Input Type: | Standard |
| Gate Charge: | 128 nC |
| Td (on/off) @ 25°C: | 16ns/84ns |
| Test Condition: | 400V, 26A, 4.7Ohm, 15V |
| Reverse Recovery Time (trr): | - |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-247-3 |
| Supplier Device Package: | TO-247 [B] |
| Image | Part Number | Description | Stock / Unit Price |
|---|---|---|---|
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SGR6N60UFTFFairchild (ON Semiconductor) |
N-CHANNEL IGBT |
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IKD08N65ET6ARMA1IR (Infineon Technologies) |
IKD08N65ET6ARMA1 |
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AIKW50N65DH5XKSA1IR (Infineon Technologies) |
IC DISCRETE 650V TO247-3 |
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IXBT6N170Wickmann / Littelfuse |
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IHW40N60RFFKSA1IR (Infineon Technologies) |
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IRGP4790DPBFInternational Components Corp. |
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