Type | Description |
---|---|
Series: | POWER MOS 8® |
Package: | Tube |
Part Status: | Active |
IGBT Type: | PT |
Voltage - Collector Emitter Breakdown (Max): | 600 V |
Current - Collector (Ic) (Max): | 65 A |
Current - Collector Pulsed (Icm): | 109 A |
Vce(on) (Max) @ Vge, Ic: | 2.5V @ 15V, 20A |
Power - Max: | 290 W |
Switching Energy: | 307µJ (on), 254µJ (off) |
Input Type: | Standard |
Gate Charge: | 102 nC |
Td (on/off) @ 25°C: | 16ns/122ns |
Test Condition: | 400V, 20A, 10Ohm, 15V |
Reverse Recovery Time (trr): | 19 ns |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
Supplier Device Package: | D3PAK |
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IGB30N60 - DISCRETE IGBT WITHOUT |
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600V, 28A, IGBT WITH ULTRAFAST S |
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