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| Type | Description |
|---|---|
| Series: | BIMOSFET™ |
| Package: | Tube |
| Part Status: | Active |
| IGBT Type: | - |
| Voltage - Collector Emitter Breakdown (Max): | 2500 V |
| Current - Collector (Ic) (Max): | 116 A |
| Current - Collector Pulsed (Icm): | 750 A |
| Vce(on) (Max) @ Vge, Ic: | 3V @ 15V, 64A |
| Power - Max: | 500 W |
| Switching Energy: | - |
| Input Type: | Standard |
| Gate Charge: | 400 nC |
| Td (on/off) @ 25°C: | - |
| Test Condition: | - |
| Reverse Recovery Time (trr): | 160 ns |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | ISOPLUSi5-Pak™ |
| Supplier Device Package: | ISOPLUSi5-Pak™ |
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|---|---|---|---|
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GN2470K4-GRoving Networks / Microchip Technology |
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STGD18N40LZ-1STMicroelectronics |
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