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| Type | Description |
|---|---|
| Series: | BIMOSFET™ |
| Package: | Tube |
| Part Status: | Not For New Designs |
| IGBT Type: | - |
| Voltage - Collector Emitter Breakdown (Max): | 3600 V |
| Current - Collector (Ic) (Max): | 70 A |
| Current - Collector Pulsed (Icm): | 420 A |
| Vce(on) (Max) @ Vge, Ic: | 2.9V @ 15V, 50A |
| Power - Max: | 290 W |
| Switching Energy: | - |
| Input Type: | Standard |
| Gate Charge: | 210 nC |
| Td (on/off) @ 25°C: | 46ns/205ns |
| Test Condition: | 960V, 50A, 5Ohm, 15V |
| Reverse Recovery Time (trr): | 1.7 µs |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | i4-Pac™-5 (3 Leads) |
| Supplier Device Package: | ISOPLUS i4-PAC™ |
| Image | Part Number | Description | Stock / Unit Price |
|---|---|---|---|
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IHW30N60TIR (Infineon Technologies) |
IHW30N60 - DISCRETE IGBT WITH AN |
In Stock: 74 $1.93000 |
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IXYH80N90C3Wickmann / Littelfuse |
IGBT 900V 165A 830W TO247 |
In Stock: 3,411,350 $9.38000 |
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IXYP10N65B3D1Wickmann / Littelfuse |
DISC IGBT XPT-GENX3 TO-220AB/FP |
In Stock: 1,400 $2.51673 |
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STGW100H65FB2-4STMicroelectronics |
TRENCH GATE FIELD-STOP, 650 V, 1 |
In Stock: 100 $7.32000 |
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IRG8P50N120KD-EPBFInternational Components Corp. |
IRG8P50N120 - DISCRETE IGBT WITH |
In Stock: 7,479 $6.50000 |
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IKW75N65ES5XKSA1IR (Infineon Technologies) |
IGBT TRENCH 650V 80A TO247-3 |
In Stock: 0 $7.36000 |
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SGP5N60RUFDTUFairchild (ON Semiconductor) |
N-CHANNEL IGBT |
In Stock: 6,374 $1.14000 |
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FGA15N120FTDTUFairchild (ON Semiconductor) |
IGBT, 30A, 1200V, N-CHANNEL |
In Stock: 900 $1.97000 |
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FGH40N60UFDTUSanyo Semiconductor/ON Semiconductor |
IGBT FIELD STOP 600V 80A TO247-3 |
In Stock: 411 $4.06000 |
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SGL160N60UFDTUSanyo Semiconductor/ON Semiconductor |
IGBT 600V 160A 250W TO264 |
In Stock: 528 $7.78000 |
