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| Type | Description |
|---|---|
| Series: | * |
| Package: | Bulk |
| Part Status: | Active |
| FET Type: | 2 N-Channel (Dual) |
| FET Feature: | Silicon Carbide (SiC) |
| Drain to Source Voltage (Vdss): | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C: | 50A |
| Rds On (Max) @ Id, Vgs: | 23mOhm @ 50A, 15V |
| Vgs(th) (Max) @ Id: | 5.5V @ 20mA |
| Gate Charge (Qg) (Max) @ Vgs: | 125nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds: | 3950pF @ 800V |
| Power - Max: | 20mW |
| Operating Temperature: | -40°C ~ 150°C (TJ) |
| Mounting Type: | Chassis Mount |
| Package / Case: | Module |
| Supplier Device Package: | Module |
| Image | Part Number | Description | Stock / Unit Price |
|---|---|---|---|
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60V, 30A, DUAL N-CHANNEL POWER M |
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SI3951DV-T1-GE3Vishay / Siliconix |
MOSFET 2P-CH 20V 2.7A 6-TSOP |
In Stock: 0 $0.36685 |
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CSD85302LTexas Instruments |
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In Stock: 4,573 $0.63000 |
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SSM6P54TU,LFToshiba Electronic Devices and Storage Corporation |
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In Stock: 5,610 $0.43000 |
