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| Type | Description |
|---|---|
| Series: | eGaN® |
| Package: | Tape & Reel (TR)Cut Tape (CT) |
| Part Status: | Active |
| FET Type: | 2 N-Channel (Dual) Common Source |
| FET Feature: | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss): | 120V |
| Current - Continuous Drain (Id) @ 25°C: | 3.4A |
| Rds On (Max) @ Id, Vgs: | 60mOhm @ 4A, 5V |
| Vgs(th) (Max) @ Id: | 2.5V @ 700µA |
| Gate Charge (Qg) (Max) @ Vgs: | 0.8nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds: | 80pF @ 60V |
| Power - Max: | - |
| Operating Temperature: | -40°C ~ 150°C (TJ) |
| Mounting Type: | - |
| Package / Case: | Die |
| Supplier Device Package: | Die |
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