RN2318(TE85L,F) price Datasheet Toshiba Electronic Devices and Storage Corporation| in-fortune.com

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Manufacturer Part: RN2318(TE85L,F)

Manufacturer: Toshiba Electronic Devices and Storage Corporation

Description: TRANS PREBIAS PNP 50V 0.1A USM

Category: Discrete Semiconductor Products

Family: Transistors - Bipolar (BJT) - Single, Pre-Biased

InStock: 17950

Datasheets Online: RN2318(TE85L,F) PDF

RN2318(TE85L,F)Notice

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Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
Transistor Type:PNP - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):47 kOhms
Resistor - Emitter Base (R2):10 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce:50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:300mV @ 250µA, 5mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:200 MHz
Power - Max:100 mW
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:USM

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Returning / warranty	Warranty	All InFortune purchases come with a 30-day money-back return policy, plus a 90-day InFortune warranty against any manufacturing defects. This warranty shall not apply to any item where defects have been caused by improper customer assembly, failure by customer to follow instructions, product modification, negligent or improper operation

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