RN4989(TE85L,F) price Datasheet Toshiba Electronic Devices and Storage Corporation| in-fortune.com

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Manufacturer Part: RN4989(TE85L,F)

Manufacturer: Toshiba Electronic Devices and Storage Corporation

Description: NPN + PNP BRT, Q1BSR=47KΩ, Q1BER

Category: Discrete Semiconductor Products

Family: Transistors - Bipolar (BJT) - Arrays, Pre-Biased

InStock: 18554

Datasheets Online: -

RN4989(TE85L,F)Notice

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Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
Transistor Type:1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):50V
Resistor - Base (R1):47kOhms
Resistor - Emitter Base (R2):22kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:300mV @ 250µA, 5mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:250MHz, 200MHz
Power - Max:200mW
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:US6

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Returning / warranty	Returning	Returns are normally accepted when completed within 30 days from date of shipment，please contact customer service for a return authorization. Parts should be unused and in original packaging. Customer has to take charge for the shipping.
Returning / warranty	Warranty	All InFortune purchases come with a 30-day money-back return policy, plus a 90-day InFortune warranty against any manufacturing defects. This warranty shall not apply to any item where defects have been caused by improper customer assembly, failure by customer to follow instructions, product modification, negligent or improper operation

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