RN2961(TE85L,F) price Datasheet Toshiba Electronic Devices and Storage Corporation| in-fortune.com

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Manufacturer Part: RN2961(TE85L,F)

Manufacturer: Toshiba Electronic Devices and Storage Corporation

Description: TRANS 2PNP PREBIAS 0.2W US6

Category: Discrete Semiconductor Products

Family: Transistors - Bipolar (BJT) - Arrays, Pre-Biased

InStock: 16682

Datasheets Online: RN2961(TE85L,F) PDF

RN2961(TE85L,F)Notice

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Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
Transistor Type:2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):50V
Resistor - Base (R1):4.7kOhms
Resistor - Emitter Base (R2):4.7kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:300mV @ 250µA, 5mA
Current - Collector Cutoff (Max):100nA (ICBO)
Frequency - Transition:200MHz
Power - Max:200mW
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:US6

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