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FQB6N90TM_AM002

FQB6N90TM_AM002

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Manufacturer Part
FQB6N90TM_AM002
Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 900V 5.8A D2PAK
Category
Discrete Semiconductor Products
Family
Transistors - FETs, MOSFETs - Single
Series
-
InStock
0331
Datasheets Online
-
Inquiry

Product Specifications

Type Description
Series:QFET®
Package:Tape & Reel (TR)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):900 V
Current - Continuous Drain (Id) @ 25°C:5.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.9Ohm @ 2.9A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:52 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1880 pF @ 25 V
FET Feature:-
Power Dissipation (Max):3.13W (Ta), 167W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263AB)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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