FQA6N80_F109 price Datasheet Sanyo Semiconductor/ON Semiconductor| in-fortune.com

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Manufacturer Part: FQA6N80_F109

Manufacturer: Sanyo Semiconductor/ON Semiconductor

Description: MOSFET N-CH 800V 6.3A TO3P

Category: Discrete Semiconductor Products

Family: Transistors - FETs, MOSFETs - Single

InStock: 12239

Datasheets Online: FQA6N80_F109 PDF

FQA6N80_F109Notice

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Series:QFET®
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:6.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.95Ohm @ 3.15A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:31 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1500 pF @ 25 V
FET Feature:-
Power Dissipation (Max):185W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-3P
Package / Case:TO-3P-3, SC-65-3

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