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| Type | Description |
|---|---|
| Series: | HEXFET® |
| Package: | Tube |
| Part Status: | Obsolete |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 30 V |
| Current - Continuous Drain (Id) @ 25°C: | 160A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 2.4mOhm @ 75A, 10V |
| Vgs(th) (Max) @ Id: | 4V @ 150µA |
| Gate Charge (Qg) (Max) @ Vgs: | 240 nC @ 10 V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 6320 pF @ 25 V |
| FET Feature: | - |
| Power Dissipation (Max): | 231W (Tc) |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | TO-262 |
| Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Image | Part Number | Description | Stock / Unit Price |
|---|---|---|---|
 |
IRF7201IR (Infineon Technologies) |
MOSFET N-CH 30V 7.3A 8SO |
In Stock: 0 $0.00000 |
 |
SPB73N03S2L-08 GIR (Infineon Technologies) |
MOSFET N-CH 30V 73A TO263-3 |
In Stock: 0 $0.00000 |
 |
TPC6009-H(TE85L,FMToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 40V 5.3A VS-6 |
In Stock: 0 $0.00000 |
 |
2SK2845(TE16L1,Q)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 900V 1A DP |
In Stock: 0 $0.00000 |
 |
SI1303DL-T1-E3Vishay / Siliconix |
MOSFET P-CH 20V 670MA SC70-3 |
In Stock: 0 $0.00000 |
 |
IPI070N06N GIR (Infineon Technologies) |
MOSFET N-CH 60V 80A TO262-3 |
In Stock: 0 $0.00000 |
 |
IXTH220N075TWickmann / Littelfuse |
MOSFET N-CH 75V 220A TO247 |
In Stock: 0 $0.00000 |
 |
IPI60R520CPAKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 6.8A TO262-3 |
In Stock: 0 $0.00000 |
 |
IRF7811WGTRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 14A 8SO |
In Stock: 0 $0.00000 |
 |
IRFR9024TRLVishay / Siliconix |
MOSFET P-CH 60V 8.8A DPAK |
In Stock: 0 $0.00000 |
