SIS436DN-T1-GE3 price Datasheet Vishay / Siliconix| in-fortune.com

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Manufacturer Part: SIS436DN-T1-GE3

Manufacturer: Vishay / Siliconix

Description: MOSFET N-CH 25V 16A PPAK 1212-8

Category: Discrete Semiconductor Products

Family: Transistors - FETs, MOSFETs - Single

InStock: 13102

Datasheets Online: SIS436DN-T1-GE3 PDF

SIS436DN-T1-GE3Notice

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Series:TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):25 V
Current - Continuous Drain (Id) @ 25°C:16A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:10.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:2.3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:22 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:855 pF @ 10 V
FET Feature:-
Power Dissipation (Max):3.5W (Ta), 27.7W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerPAK® 1212-8
Package / Case:PowerPAK® 1212-8

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