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| Type | Description |
|---|---|
| Series: | - |
| Package: | Tube |
| Part Status: | Obsolete |
| FET Type: | - |
| Technology: | SiC (Silicon Carbide Junction Transistor) |
| Drain to Source Voltage (Vdss): | 1200 V |
| Current - Continuous Drain (Id) @ 25°C: | 45A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | - |
| Rds On (Max) @ Id, Vgs: | 50mOhm @ 20A |
| Vgs(th) (Max) @ Id: | - |
| Gate Charge (Qg) (Max) @ Vgs: | - |
| Vgs (Max): | - |
| Input Capacitance (Ciss) (Max) @ Vds: | 3091 pF @ 800 V |
| FET Feature: | - |
| Power Dissipation (Max): | 282W (Tc) |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | TO-247AB |
| Package / Case: | TO-247-3 |
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MOSFET N-CH 30V 9A 8SOP |
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MOSFET N-CH 600V 20A TO263 |
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MOSFET P-CH 30V 3A 6CPH |
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MOSFET N-CH 20V 1.32A SC89-6 |
In Stock: 0 $0.00000 |
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IRF7467IR (Infineon Technologies) |
MOSFET N-CH 30V 11A 8SO |
In Stock: 0 $0.00000 |
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AOD4102LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 8A/19A TO252 |
In Stock: 0 $0.00000 |
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IPD06P007NATMA1IR (Infineon Technologies) |
MOSFET P-CH 60V 4.3A TO252-3 |
In Stock: 0 $0.00000 |
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SI6410DQ-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 8TSSOP |
In Stock: 0 $0.00000 |
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2SK2989(T6CANO,A,FToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH TO92MOD |
In Stock: 0 $0.00000 |
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IRFL9014TRVishay / Siliconix |
MOSFET P-CH 60V 1.8A SOT223 |
In Stock: 0 $0.00000 |
