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| Type | Description |
|---|---|
| Series: | - |
| Package: | Bulk |
| Part Status: | Obsolete |
| FET Type: | - |
| Technology: | SiC (Silicon Carbide Junction Transistor) |
| Drain to Source Voltage (Vdss): | 650 V |
| Current - Continuous Drain (Id) @ 25°C: | 4A (Tc) (165°C) |
| Drive Voltage (Max Rds On, Min Rds On): | - |
| Rds On (Max) @ Id, Vgs: | 415mOhm @ 4A |
| Vgs(th) (Max) @ Id: | - |
| Gate Charge (Qg) (Max) @ Vgs: | - |
| Vgs (Max): | - |
| Input Capacitance (Ciss) (Max) @ Vds: | 324 pF @ 35 V |
| FET Feature: | - |
| Power Dissipation (Max): | 47W (Tc) |
| Operating Temperature: | -55°C ~ 225°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | TO-257 |
| Package / Case: | TO-257-3 |
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