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| Type | Description |
|---|---|
| Series: | - |
| Package: | Bulk |
| Part Status: | Active |
| Transistor Type: | NPN - Pre-Biased |
| Current - Collector (Ic) (Max): | 100 mA |
| Voltage - Collector Emitter Breakdown (Max): | 50 V |
| Resistor - Base (R1): | 22 kOhms |
| Resistor - Emitter Base (R2): | 22 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 56 @ 5mA, 5V |
| Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max): | 100nA (ICBO) |
| Frequency - Transition: | 250 MHz |
| Power - Max: | 300 mW |
| Mounting Type: | Through Hole |
| Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Supplier Device Package: | TO-92-3 |
| Image | Part Number | Description | Stock / Unit Price |
|---|---|---|---|
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DRA3115E0LPanasonic |
TRANS PREBIAS PNP 100MW SSSMINI3 |
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BCR 133T E6327IR (Infineon Technologies) |
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UNR52AEG0LPanasonic |
TRANS PREBIAS NPN 150MW SMINI3 |
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UNR51A6G0LPanasonic |
TRANS PREBIAS PNP 150MW SMINI3 |
In Stock: 0 $0.00000 |
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UNR511E00LPanasonic |
TRANS PREBIAS PNP 150MW SMINI3 |
In Stock: 0 $0.00000 |
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UNR5111G0LPanasonic |
TRANS PREBIAS PNP 150MW SMINI3 |
In Stock: 0 $0.00000 |
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UNR32AMG0LPanasonic |
TRANS PREBIAS NPN 100MW SSSMINI3 |
In Stock: 0 $0.00000 |
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PDTD113ZK,115NXP Semiconductors |
TRANS PREBIAS NPN 250MW SMT3 |
In Stock: 0 $0.00000 |
