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RN2104MFV,L3F

RN2104MFV,L3F

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Manufacturer Part
RN2104MFV,L3F
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
TRANS PREBIAS PNP 50V 0.1A VESM
Category
Discrete Semiconductor Products
Family
Transistors - Bipolar (BJT) - Single, Pre-Biased
Series
-
InStock
8744
Datasheets Online
-
Inquiry

Product Specifications

Type Description
Series:-
Package:Tape & Reel (TR)
Part Status:Active
Transistor Type:PNP - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):47 kOhms
Resistor - Emitter Base (R2):47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:300mV @ 500µA, 5mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:250 MHz
Power - Max:150 mW
Mounting Type:Surface Mount
Package / Case:SOT-723
Supplier Device Package:VESM

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