RN2711(TE85L,F) price Datasheet Toshiba Electronic Devices and Storage Corporation| in-fortune.com

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Manufacturer Part: RN2711(TE85L,F)

Manufacturer: Toshiba Electronic Devices and Storage Corporation

Description: TRANS 2PNP PREBIAS 0.2W USV

Category: Discrete Semiconductor Products

Family: Transistors - Bipolar (BJT) - Arrays, Pre-Biased

InStock: 16553

Datasheets Online: RN2711(TE85L,F) PDF

RN2711(TE85L,F)Notice

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Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
Transistor Type:2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):50V
Resistor - Base (R1):10kOhms
Resistor - Emitter Base (R2):-

DC Current Gain (hFE) (Min) @ Ic, Vce:400 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic:300mV @ 250µA, 5mA
Current - Collector Cutoff (Max):100nA (ICBO)
Frequency - Transition:200MHz
Power - Max:200mW
Mounting Type:Surface Mount
Package / Case:5-TSSOP, SC-70-5, SOT-353
Supplier Device Package:USV

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Returning / warranty	Warranty	All InFortune purchases come with a 30-day money-back return policy, plus a 90-day InFortune warranty against any manufacturing defects. This warranty shall not apply to any item where defects have been caused by improper customer assembly, failure by customer to follow instructions, product modification, negligent or improper operation

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