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| Type | Description |
|---|---|
| Series: | - |
| Package: | Tube |
| Part Status: | Active |
| IGBT Type: | Trench Field Stop |
| Voltage - Collector Emitter Breakdown (Max): | 650 V |
| Current - Collector (Ic) (Max): | 40 A |
| Current - Collector Pulsed (Icm): | 60 A |
| Vce(on) (Max) @ Vge, Ic: | 2.1V @ 15V, 20A |
| Power - Max: | 75 W |
| Switching Energy: | 345µJ (on), 95µJ (off) |
| Input Type: | Standard |
| Gate Charge: | 38 nC |
| Td (on/off) @ 25°C: | 18ns/102ns |
| Test Condition: | 400V, 10A, 23Ohm, 15V |
| Reverse Recovery Time (trr): | 235 ns |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-3P-3 Full Pack |
| Supplier Device Package: | TO-3PF-3 |
| Image | Part Number | Description | Stock / Unit Price |
|---|---|---|---|
|
RJH3047ADPK-80#T2Renesas Electronics America |
IGBT |
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INSULATED GATE BIPOLAR TRANSISTO |
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DISC IGBT XPT-GENX4 TO-247AD |
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10US SHORT-CIRCUIT TOLERANCE, 12 |
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HGTG24N60D1 |
UFS SERIES N-CHANNEL IGBT |
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RJH3047DPK-80#T2Renesas Electronics America |
IGBT |
In Stock: 4,981 $2.30000 |
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HGTG34N100E2 |
55A, 1000V N-CHANNEL IGBT |
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IGBT, 40A, 1200V, N-CHANNEL |
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IGBT - 650 V 100 A FS3 FOR EV TR |
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FS150R12PT4 |
INSULATED GATE BIPOLAR TRANSISTO |
In Stock: 137 $150.65000 |
