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| Type | Description |
|---|---|
| Series: | - |
| Package: | Tube |
| Part Status: | Active |
| IGBT Type: | Trench Field Stop |
| Voltage - Collector Emitter Breakdown (Max): | 650 V |
| Current - Collector (Ic) (Max): | 150 A |
| Current - Collector Pulsed (Icm): | 300 A |
| Vce(on) (Max) @ Vge, Ic: | 2.1V @ 15V, 75A |
| Power - Max: | 455 W |
| Switching Energy: | 1.06mJ (on), 1.56mJ (off) |
| Input Type: | Standard |
| Gate Charge: | 126 nC |
| Td (on/off) @ 25°C: | 55ns/189ns |
| Test Condition: | 400V, 75A, 15Ohm, 15V |
| Reverse Recovery Time (trr): | 36 ns |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-247-4 |
| Supplier Device Package: | TO-247-4 |
| Image | Part Number | Description | Stock / Unit Price |
|---|---|---|---|
|
HGTH20N50C1 |
20A, 500V, N-CHANNEL IGBT |
In Stock: 4,984 $6.29000 |
|
HGTH20N40C1D |
20A, 400V, N-CHANNEL IGBT |
In Stock: 74 $3.14000 |
|
HGTH20N50E1 |
20A, 500V, N-CHANNEL IGBT |
In Stock: 287 $3.14000 |
|
FF450R12ME4IR (Infineon Technologies) |
INSULATED GATE BIPOLAR TRANSISTO |
In Stock: 48 $148.25000 |
|
AFGY120T65SPDSanyo Semiconductor/ON Semiconductor |
IGBT - 650 V 120 A FS3 FOR EV TR |
In Stock: 0 $9.94000 |
|
RJP6065DPE-00#J3Renesas Electronics America |
IGBT |
In Stock: 1,000 $1.64000 |
|
HGTA32N60E2 |
32A, 600V N-CHANNEL IGBT |
In Stock: 215 $10.60000 |
|
FZ2400R12HP4NPSA1IR (Infineon Technologies) |
INSULATED GATE BIPOLAR TRANSISTO |
In Stock: 60 $745.73000 |
|
IXXH40N65C4D1Wickmann / Littelfuse |
DISC IGBT XPT-GENX4 TO-247AD |
In Stock: 0 $4.85640 |
|
IXBF42N300Wickmann / Littelfuse |
IGBT 3000V TO247 |
In Stock: 325 $48.62240 |
