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| Type | Description |
|---|---|
| Series: | * |
| Package: | Bulk |
| Part Status: | Active |
| IGBT Type: | - |
| Voltage - Collector Emitter Breakdown (Max): | - |
| Current - Collector (Ic) (Max): | - |
| Current - Collector Pulsed (Icm): | - |
| Vce(on) (Max) @ Vge, Ic: | - |
| Power - Max: | - |
| Switching Energy: | - |
| Input Type: | - |
| Gate Charge: | - |
| Td (on/off) @ 25°C: | - |
| Test Condition: | - |
| Reverse Recovery Time (trr): | - |
| Operating Temperature: | - |
| Mounting Type: | - |
| Package / Case: | - |
| Supplier Device Package: | - |
| Image | Part Number | Description | Stock / Unit Price |
|---|---|---|---|
|
IRG7PH35UD1-EPInternational Components Corp. |
IGBT W/ULTRA-LOW VF DIODE FOR IN |
In Stock: 950,719 $2.77000 |
|
FGD3050G2Sanyo Semiconductor/ON Semiconductor |
IGBT 500V 27A DPAK-3 |
In Stock: 480 $2.03000 |
|
RJP4005ANS-01#Q1Renesas Electronics America |
IGBTS, 400V, 150A, N-CHANNEL |
In Stock: 744,000 $0.47000 |
|
HGTG32N60E2 |
50A, 600V N-CHANNEL IGBT |
In Stock: 2,969 $7.33000 |
|
HGTD3N60B3S |
7A, 600V, UFS N-CHANNEL IGBT |
In Stock: 944 $0.48000 |
|
FZ1800R12HP4B9NPSA1IR (Infineon Technologies) |
INSULATED GATE BIPOLAR TRANSISTO |
In Stock: 106 $813.19000 |
|
RGTVX2TS65GC11ROHM Semiconductor |
2US SHORT-CIRCUIT TOLERANCE, 650 |
In Stock: 0 $5.73000 |
|
RGS50TSX2GC11ROHM Semiconductor |
10US SHORT-CIRCUIT TOLERANCE, 12 |
In Stock: 0 $6.81000 |
|
HGTP10N50E1D |
17.5A, 500V, N-CHANNEL IGBT |
In Stock: 3,800 $2.90000 |
|
IGC50T120T8RQX1SA1IR (Infineon Technologies) |
IGBT 1200V 50A DIE |
In Stock: 0 $11.82000 |
