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| Type | Description |
|---|---|
| Series: | GenX3™, XPT™ |
| Package: | Tape & Reel (TR) |
| Part Status: | Active |
| IGBT Type: | PT |
| Voltage - Collector Emitter Breakdown (Max): | 900 V |
| Current - Collector (Ic) (Max): | 20 A |
| Current - Collector Pulsed (Icm): | 48 A |
| Vce(on) (Max) @ Vge, Ic: | 3V @ 15V, 8A |
| Power - Max: | 125 W |
| Switching Energy: | 460µJ (on), 180µJ (off) |
| Input Type: | Standard |
| Gate Charge: | 13.3 nC |
| Td (on/off) @ 25°C: | 16ns/40ns |
| Test Condition: | 450V, 8A, 30Ohm, 15V |
| Reverse Recovery Time (trr): | 20 ns |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | TO-252 |
| Image | Part Number | Description | Stock / Unit Price |
|---|---|---|---|
|
HGT1S15N120C3 |
35A, 1200V, N-CHANNEL IGBT |
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12A, 400V, N-CHANNEL IGBT |
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FP75R07N2E4IR (Infineon Technologies) |
FP75R07 - IGBT MODULE |
In Stock: 39 $74.00000 |
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RJP30H2DPK-M2#T0Renesas Electronics America |
IGBT |
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NGTB05N60R2DT4GSanyo Semiconductor/ON Semiconductor |
INSULATED GATE BIPOLAR TRANSISTO |
In Stock: 4,620 $0.42000 |
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HGT1S12N60B3S |
27A, 600V, UFS N-CHANNEL IGBT |
In Stock: 1,600 $1.30000 |
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NGTB40N65IHRTGSanyo Semiconductor/ON Semiconductor |
IGBT, MONOLITHIC WITH REVERSE CO |
In Stock: 13,840 $1.31000 |
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6A, 400V N-CHANNEL IGBT |
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FF225R17ME4_B11IR (Infineon Technologies) |
FF225R17 - IGBT MODULE |
In Stock: 44 $127.65000 |
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HGTG20N50C1D |
26A, 500V, N-CHANNEL IGBT |
In Stock: 3,153 $7.07000 |
