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| Type | Description |
|---|---|
| Series: | - |
| Package: | Bulk |
| Part Status: | Active |
| FET Type: | 2 N-Channel (Half Bridge) |
| FET Feature: | Silicon Carbide (SiC) |
| Drain to Source Voltage (Vdss): | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C: | 300A (Tc) |
| Rds On (Max) @ Id, Vgs: | - |
| Vgs(th) (Max) @ Id: | 5.6V @ 91mA |
| Gate Charge (Qg) (Max) @ Vgs: | - |
| Input Capacitance (Ciss) (Max) @ Vds: | 14000pF @ 10V |
| Power - Max: | 1260W (Tc) |
| Operating Temperature: | -40°C ~ 150°C (TJ) |
| Mounting Type: | Chassis Mount |
| Package / Case: | Module |
| Supplier Device Package: | Module |
| Image | Part Number | Description | Stock / Unit Price |
|---|---|---|---|
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IAUC45N04S6L063HATMA1 |
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POWER FIELD-EFFECT TRANSISTOR, 4 |
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In Stock: 4,469 $1.07000 |
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In Stock: 0 $616.05000 |
