TK12J60W,S1VE(S price Datasheet Toshiba Electronic Devices and Storage Corporation| in-fortune.com

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Manufacturer Part: TK12J60W,S1VE(S

Manufacturer: Toshiba Electronic Devices and Storage Corporation

Description: MOSFET N-CH 600V 11.5A TO3P

Category: Discrete Semiconductor Products

Family: Transistors - FETs, MOSFETs - Single

InStock: 19865

Datasheets Online: -

TK12J60W,S1VE(SNotice

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Series:-
Package:Tray
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:11.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:300mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id:3.7V @ 600µA

Gate Charge (Qg) (Max) @ Vgs:25 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:890 pF @ 300 V
FET Feature:-
Power Dissipation (Max):110W (Tc)
Operating Temperature:150°C
Mounting Type:Through Hole
Supplier Device Package:TO-3P(N)
Package / Case:TO-3P-3, SC-65-3

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Returning / warranty	Returning	Returns are normally accepted when completed within 30 days from date of shipment，please contact customer service for a return authorization. Parts should be unused and in original packaging. Customer has to take charge for the shipping.
Returning / warranty	Warranty	All InFortune purchases come with a 30-day money-back return policy, plus a 90-day InFortune warranty against any manufacturing defects. This warranty shall not apply to any item where defects have been caused by improper customer assembly, failure by customer to follow instructions, product modification, negligent or improper operation

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