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| Type | Description |
|---|---|
| Series: | - |
| Package: | Bulk |
| Part Status: | Obsolete |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 200 V |
| Current - Continuous Drain (Id) @ 25°C: | 27.4A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 100mOhm @ 17A, 10V |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 115 nC @ 10 V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | - |
| FET Feature: | - |
| Power Dissipation (Max): | 4W (Ta), 150W (Tc) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | TO-267AB |
| Package / Case: | TO-267AB |
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|---|---|---|---|
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DIODE LOW LEAKAGE 12V SMD |
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MOSFET N-CH 3X3 DFN |
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TRANS SJT 650V 15A TO257 |
In Stock: 0 $0.00000 |
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TPCA8008-H(TE12LQMToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 250V 4A 8SOP |
In Stock: 0 $0.00000 |
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IRFC250NBIR (Infineon Technologies) |
MOSFET 200V DIE |
In Stock: 0 $0.00000 |
