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RD3T050CNTL1

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Manufacturer Part
RD3T050CNTL1
Manufacturer
ROHM Semiconductor
Description
MOSFET N-CH 200V 5A TO252
Category
Discrete Semiconductor Products
Family
Transistors - FETs, MOSFETs - Single
InStock
19998
Datasheets Online
RD3T050CNTL1 PDF
  • Series:-
  • Package:Tape & Reel (TR)Cut Tape (CT)
  • Part Status:Active
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):200 V
  • Current - Continuous Drain (Id) @ 25°C:5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:760mOhm @ 2.5A, 10V
  • Vgs(th) (Max) @ Id:5.25V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:8.3 nC @ 10 V
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:330 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):29W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:TO-252
  • Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Shipping option We provide DHL, FedEx, EMS, SF Express, and Registered Air Mail international shipping.
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You can also find the tracking number in order history.
Returning / warranty Returning Returns are normally accepted when completed within 30 days from date of shipment,please contact customer service for a return authorization.
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Customer has to take charge for the shipping.
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This warranty shall not apply to any item where defects have been caused by improper customer assembly, failure by customer to follow instructions, product modification, negligent or improper operation
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