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| Type | Description |
|---|---|
| Series: | HEXFET® |
| Package: | Bulk |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 30 V |
| Current - Continuous Drain (Id) @ 25°C: | 260A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs: | 3mOhm @ 38A, 10V |
| Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 110 nC @ 4.5 V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 5.89 pF @ 15 V |
| FET Feature: | - |
| Power Dissipation (Max): | 330W (Tc) |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | TO-220AB |
| Package / Case: | TO-220-3 |
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|---|---|---|---|
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APT29F100B2Roving Networks / Microchip Technology |
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MCB85N06Y-TPMicro Commercial Components (MCC) |
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BUK6D56-60EXNexperia |
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STP9NK60ZSTMicroelectronics |
MOSFET N-CH 600V 7A TO220AB |
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RM150N100T2Rectron USA |
MOSFET N-CH 100V 150A TO220-3 |
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FQD3N60CTM-WSSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 2.4A DPAK |
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IPB47N10SL26ATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 47A TO263-3 |
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STF18N65M2STMicroelectronics |
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AOD4132Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 85A TO252 |
In Stock: 2,297 $1.18000 |
