RN49A1FE(TE85L,F) price Datasheet Toshiba Electronic Devices and Storage Corporation| in-fortune.com

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Manufacturer Part: RN49A1FE(TE85L,F)

Manufacturer: Toshiba Electronic Devices and Storage Corporation

Description: PNP + NPN BRT, Q1BSR=2.2KΩ, Q1BE

Category: Discrete Semiconductor Products

Family: Transistors - Bipolar (BJT) - Arrays, Pre-Biased

InStock: 11046

Datasheets Online: -

RN49A1FE(TE85L,F)Notice

HK InFortune Electronics Co., Ltd is an independent distributor of electronic components, We are dedicated to providing customers with electronic components and supporting services. sell new & original products and offer 1 year warranty for our products. Buy the RN49A1FE(TE85L,F) Toshiba Electronic Devices and Storage Corporation at in-fortune.com. We have 4000 pieces of RN49A1FE(TE85L,F) in stock available now. Submit an inquiry for RN49A1FE(TE85L,F) or send an email to sales@in-fortune.com, we will contact you in 24 hours.

Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
Transistor Type:1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):50V
Resistor - Base (R1):2.2kOhms, 22kOhms
Resistor - Emitter Base (R2):47kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:300mV @ 250µA, 5mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:200MHz, 250MHz
Power - Max:100mW
Mounting Type:Surface Mount
Package / Case:SOT-563, SOT-666
Supplier Device Package:ES6

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Returning / warranty	Warranty	All InFortune purchases come with a 30-day money-back return policy, plus a 90-day InFortune warranty against any manufacturing defects. This warranty shall not apply to any item where defects have been caused by improper customer assembly, failure by customer to follow instructions, product modification, negligent or improper operation

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